5 results
Reliability of High-Temperature Operation for GaN-Based OPAMP
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1195 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1195-B08-02
- Print publication:
- 2009
-
- Article
- Export citation
Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-06
- Print publication:
- 2008
-
- Article
- Export citation
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I15-22
- Print publication:
- 2006
-
- Article
- Export citation
Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF13-06
- Print publication:
- 2005
-
- Article
- Export citation
Fabrication and electrical characteristics of Ti/Al ohmic contact to Si+ implanted GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF14-03
- Print publication:
- 2005
-
- Article
- Export citation